My SCR tester made-from-a-flashlight will also test IGBTs and Mosfets. Add a 9 voltage battery in series with the gate lead. 2SK4145 ( K4145 ) - MOSFET, N channel, 60V, 84A, 84W,0.007 ohm, TO-220 (K4145 ) - MOSFET This seems ideal: STP80NF06 N Channel 60V, 80A, 82W, 0.0065 Ohm, TO-220 STripFET™ II POWER MOSFET.
- K4145 2SK4145 Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as.
- Part number: K4145 Functions: 2SK4145, This is Semiconductor. Manufacturer: NEC.
Type Designator: CS4145
K4145 Mosfet Pinout
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 60 V Amr diab deezer.
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 84 A Gp6 tabs for sale.
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 375 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220AB
CS4145 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4145 Datasheet (PDF)
0.1. cs4145.pdf Size:350K _wuxi_china Google browser app.
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4145 A8H General Description VDSS 60 V CS4145 A8H, the silicon N-channel Enhanced ID 84 A PD(TC=25) 200 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 8.5 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
Datasheet: 2SK3435, 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3, CEP51A3, 2N7002, FDD6035AL, FHP740, FTP08N06A, GPT13N50, GPT13N50D, JCS4N65C, JCS4N65F, JCS4N65R.
K4145 Mosfet Datasheet
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 60 V Amr diab deezer.
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 84 A Gp6 tabs for sale.
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 375 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220AB
CS4145 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4145 Datasheet (PDF)
0.1. cs4145.pdf Size:350K _wuxi_china Google browser app.
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4145 A8H General Description VDSS 60 V CS4145 A8H, the silicon N-channel Enhanced ID 84 A PD(TC=25) 200 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 8.5 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
Datasheet: 2SK3435, 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3, CEP51A3, 2N7002, FDD6035AL, FHP740, FTP08N06A, GPT13N50, GPT13N50D, JCS4N65C, JCS4N65F, JCS4N65R.
K4145 Mosfet Datasheet
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02